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Kingston SNY1600S11-4G-EDEG 4GB
Samsung M471B5773DH0-CK0 2GB

Kingston SNY1600S11-4G-EDEG 4GB vs Samsung M471B5773DH0-CK0 2GB

Overall score
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Overall score
star star star star star
Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

Differences Specifications Comments

Differences

Kingston SNY1600S11-4G-EDEG 4GB Reasons to consider
Kingston SNY1600S11-4G-EDEG 4GB
Report a bug
Samsung M471B5773DH0-CK0 2GB Reasons to consider
Samsung M471B5773DH0-CK0 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 29
    Around -7% lower latency
  • Faster reading speed, GB/s
    12.2 left arrow 9.4
    Average value in the tests
  • Faster write speed, GB/s
    7.8 left arrow 5.1
    Average value in the tests

Specifications

Complete list of technical specifications
Kingston SNY1600S11-4G-EDEG 4GB
Samsung M471B5773DH0-CK0 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 27
  • Read speed, GB/s
    9.4 left arrow 12.2
  • Write speed, GB/s
    5.1 left arrow 7.8
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1432 left arrow 1763

Kingston SNY1600S11-4G-EDEG 4GB RAM comparisons

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

Samsung M471B5773DH0-CK0 2GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Nanya Technology NT2GC64B8HC0NF-CG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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