RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF25664AZ-1G4F1 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Compare
Micron Technology 16JTF25664AZ-1G4F1 2GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Overall score
Micron Technology 16JTF25664AZ-1G4F1 2GB
Overall score
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF25664AZ-1G4F1 2GB
Report a bug
Below the latency in the PassMark tests, ns
40
75
Around 47% lower latency
Faster write speed, GB/s
8.3
7.1
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Report a bug
Faster reading speed, GB/s
14.9
13.6
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF25664AZ-1G4F1 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
75
Read speed, GB/s
13.6
14.9
Write speed, GB/s
8.3
7.1
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2035
1763
Micron Technology 16JTF25664AZ-1G4F1 2GB RAM comparisons
Micron Technology 16JTF25664AZ-1G4G1 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2800C15-8GRK 8GB
Samsung M3 78T6553CZ3-CD5 512MB
G Skill Intl F4-3200C14-16GTZKY 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston KCRXJ6-HYJ 16GB
Samsung M378B5273CH0-CH9 4GB
SK Hynix HMA82GS7AFR8N-UH 16GB
Kingston KF560C40-16 16GB
A-DATA Technology DDR4 3200 2OZ 4GB
Samsung M391B5673FH0-CH9 2GB
Kingston CBD26D4S9D8ME-16 16GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-2800C15-8GRBB 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Transcend Information JM3200HLG-8G 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMV16GX4M1A2666C18 16GB
Samsung M471B5173DB0-YK0 4GB
Kingston 9965600-027.A00G 16GB
Kingston 9905469-143.A00LF 4GB
Avant Technology W642GU42J5213N 16GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4400C18-8GTRG 8GB
Report a bug
×
Bug description
Source link