Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M378A5244CB0-CVF 4GB

Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M378A5244CB0-CVF 4GB

Overall score
star star star star star
Micron Technology 8KTF25664HZ-1G4M1 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

Overall score
star star star star star
Samsung M378A5244CB0-CVF 4GB

Samsung M378A5244CB0-CVF 4GB

Differences

  • Below the latency in the PassMark tests, ns
    30 left arrow 41
    Around -37% lower latency
  • Faster reading speed, GB/s
    16 left arrow 10
    Average value in the tests
  • Faster write speed, GB/s
    12.3 left arrow 7.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    23400 left arrow 10600
    Around 2.21 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 30
  • Read speed, GB/s
    10.0 left arrow 16.0
  • Write speed, GB/s
    7.2 left arrow 12.3
  • Memory bandwidth, mbps
    10600 left arrow 23400
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
  • Ranking PassMark (The more the better)
    1210 left arrow 2709
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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