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PNY Electronics 4GBH2X02E99927-16 4GB
Samsung M378A2G43AB3-CWE 16GB
Compare
PNY Electronics 4GBH2X02E99927-16 4GB vs Samsung M378A2G43AB3-CWE 16GB
Overall score
PNY Electronics 4GBH2X02E99927-16 4GB
Overall score
Samsung M378A2G43AB3-CWE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics 4GBH2X02E99927-16 4GB
Report a bug
Reasons to consider
Samsung M378A2G43AB3-CWE 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
63
Around -80% lower latency
Faster reading speed, GB/s
17.6
6.1
Average value in the tests
Faster write speed, GB/s
12.1
5.0
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics 4GBH2X02E99927-16 4GB
Samsung M378A2G43AB3-CWE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
63
35
Read speed, GB/s
6.1
17.6
Write speed, GB/s
5.0
12.1
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1274
3221
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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