RAM comparison Samsung M378A1K43EB2-CWE 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Samsung M378A1K43EB2-CWE 8GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Overall score

Samsung M378A1K43EB2-CWE 8GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A1K43EB2-CWE 8GB

Below the latency in the PassMark tests, ns

33 71

Around 54% lower latency
Faster reading speed, GB/s

17.6 15.6

Average value in the tests
Faster write speed, GB/s

12.0 6.4

Average value in the tests
Higher memory bandwidth, mbps

25600 21300

Around 1.2% higher bandwidth

Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Complete list of technical specifications

Samsung M378A1K43EB2-CWE 8GB

Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2910 1650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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