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Samsung M378B5273CH0-CH9 4GB
Nanya Technology NT2GC64B88G0NS-DI 2GB
Compare
Samsung M378B5273CH0-CH9 4GB vs Nanya Technology NT2GC64B88G0NS-DI 2GB
Overall score
Samsung M378B5273CH0-CH9 4GB
Overall score
Nanya Technology NT2GC64B88G0NS-DI 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5273CH0-CH9 4GB
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Faster reading speed, GB/s
13.2
12.4
Average value in the tests
Faster write speed, GB/s
8.4
8.0
Average value in the tests
Reasons to consider
Nanya Technology NT2GC64B88G0NS-DI 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
37
Around -42% lower latency
Higher memory bandwidth, mbps
12800
10600
Around 1.21 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Nanya Technology NT2GC64B88G0NS-DI 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
37
26
Read speed, GB/s
13.2
12.4
Write speed, GB/s
8.4
8.0
Memory bandwidth, mbps
10600
12800
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1333 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2143
1710
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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