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Samsung M378B5273CH0-CH9 4GB
Nanya Technology NT2GC64B88G0NS-DI 2GB

Samsung M378B5273CH0-CH9 4GB vs Nanya Technology NT2GC64B88G0NS-DI 2GB

Overall score
star star star star star
Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Overall score
star star star star star
Nanya Technology NT2GC64B88G0NS-DI 2GB

Nanya Technology NT2GC64B88G0NS-DI 2GB

Differences Specifications Comments

Differences

Samsung M378B5273CH0-CH9 4GB Reasons to consider
Samsung M378B5273CH0-CH9 4GB
Report a bug
  • Faster reading speed, GB/s
    13.2 left arrow 12.4
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 8.0
    Average value in the tests
Nanya Technology NT2GC64B88G0NS-DI 2GB Reasons to consider
Nanya Technology NT2GC64B88G0NS-DI 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 37
    Around -42% lower latency
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Samsung M378B5273CH0-CH9 4GB
Nanya Technology NT2GC64B88G0NS-DI 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    37 left arrow 26
  • Read speed, GB/s
    13.2 left arrow 12.4
  • Write speed, GB/s
    8.4 left arrow 8.0
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2143 left arrow 1710

Samsung M378B5273CH0-CH9 4GB RAM comparisons

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Nanya Technology NT2GC64B88G0NS-DI 2GB RAM comparisons

SK Hynix HMT325S6CFR8C-PB 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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