Samsung M378B5273CH0-CH9 4GB vs Nanya Technology NT2GC64B88G0NS-DI 2GB

Punteggio complessivo

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Punteggio complessivo

Nanya Technology NT2GC64B88G0NS-DI 2GB

Nanya Technology NT2GC64B88G0NS-DI 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M378B5273CH0-CH9 4GB

Motivi da considerare
Samsung M378B5273CH0-CH9 4GB

Velocità di lettura più elevata, GB/s

13.2 12.4

Valore medio nei test
Velocità di scrittura più elevata, GB/s

8.4 8.0

Valore medio nei test

Nanya Technology NT2GC64B88G0NS-DI 2GB

Motivi da considerare
Nanya Technology NT2GC64B88G0NS-DI 2GB

Al di sotto della latenza nei test PassMark, ns

26 37

Intorno -42% latenza inferiore
Larghezza di banda di memoria superiore, mbps

12800 10600

Intorno 1.21 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Samsung M378B5273CH0-CH9 4GB

Nanya Technology NT2GC64B88G0NS-DI 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

37 26
Velocità di lettura, GB/s

13.2 12.4
Velocità di scrittura, GB/s

8.4 8.0
Larghezza di banda della memoria, mbps

10600 12800

Other

Descrizione

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2143 1710

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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