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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT204864BF160B.C16 16GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT204864BF160B.C16 16GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Crucial Technology CT204864BF160B.C16 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
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Below the latency in the PassMark tests, ns
28
35
Around 20% lower latency
Faster reading speed, GB/s
12.7
9.8
Average value in the tests
Faster write speed, GB/s
7.5
7.2
Average value in the tests
Reasons to consider
Crucial Technology CT204864BF160B.C16 16GB
Report a bug
Higher memory bandwidth, mbps
12800
8500
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT204864BF160B.C16 16GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
28
35
Read speed, GB/s
12.7
9.8
Write speed, GB/s
7.5
7.2
Memory bandwidth, mbps
8500
12800
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1066 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1988
1811
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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