RAM comparison Samsung M393B5170EH1-CH9 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Samsung M393B5170EH1-CH9 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Overall score

Samsung M393B5170EH1-CH9 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M393B5170EH1-CH9 4GB

Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Below the latency in the PassMark tests, ns

19 51

Around -168% lower latency
Faster reading speed, GB/s

19.5 10.2

Average value in the tests
Faster write speed, GB/s

15.8 7.6

Average value in the tests
Higher memory bandwidth, mbps

19200 10600

Around 1.81 higher bandwidth

Complete list of technical specifications

Samsung M393B5170EH1-CH9 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2049 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns