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Samsung M393B5170EH1-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Samsung M393B5170EH1-CH9 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

总分
star star star star star
Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB

差异 规格 评论

差异

Samsung M393B5170EH1-CH9 4GB 需要考虑的原因
Samsung M393B5170EH1-CH9 4GB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 51
    左右 -168% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M393B5170EH1-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 19
  • 读取速度，GB/s
    10.2 left arrow 19.5
  • 写入速度，GB/s
    7.6 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2049 left arrow 3435

Samsung M393B5170EH1-CH9 4GB RAM的比较

Corsair CMT8GX3M2A1866C9 4GB
G Skill Intl F4-2133C15-16GRS 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
G Skill Intl F4-3300C16-8GTZ 8GB
G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3200 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
Crucial Technology CT8G4SFS824A.M8FH 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Apacer Technology GD2.111881.002 4GB
Apacer Technology GD2.111881.002 4GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Kingston XF875V-MIH 8GB
Kingston XF875V-MIH 8GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C14-32GTRS 32GB
G Skill Intl F4-3200C14-32GTRS 32GB
内存RAM
Kingston 99U5403-465.A00LF 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
G Skill Intl F4-3000C15-8GTZB 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4400C19-32GTRS 32GB
G Skill Intl F4-4400C19-32GTRS 32GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
Micron Technology 18ASF1G72PDZ-2G3A2 8GB
内存RAM
Samsung M393B5170EH1-CH9 4GB
Samsung M393B5170EH1-CH9 4GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
A-DATA Technology AO2P32NCST2-BZ7SHD 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9905734-003.A00G 32GB
Kingston 9905734-003.A00G 32GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM