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Samsung M393B5170GB0-CMA 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Compare
Samsung M393B5170GB0-CMA 4GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB
Overall score
Samsung M393B5170GB0-CMA 4GB
Overall score
Micron Technology 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M393B5170GB0-CMA 4GB
Report a bug
Reasons to consider
Micron Technology 8ATF51264AZ-2G1A1 4GB
Report a bug
Below the latency in the PassMark tests, ns
43
49
Around -14% lower latency
Faster reading speed, GB/s
12.2
10.9
Average value in the tests
Faster write speed, GB/s
9.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
14900
Around 1.14 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M393B5170GB0-CMA 4GB
Micron Technology 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
49
43
Read speed, GB/s
10.9
12.2
Write speed, GB/s
8.4
9.7
Memory bandwidth, mbps
14900
17000
Other
Description
PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
9-10-9-28 / 1866 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2283
2501
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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