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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Compare
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Lexar Co Limited LD4BU008G-H3200ULH 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
32
Around 31% lower latency
Reasons to consider
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Report a bug
Faster reading speed, GB/s
20.6
17.7
Average value in the tests
Faster write speed, GB/s
14.7
12.7
Average value in the tests
Higher memory bandwidth, mbps
25600
21300
Around 1.2 higher bandwidth
Specifications
Complete list of technical specifications
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Lexar Co Limited LD4BU008G-H3200ULH 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
22
32
Read speed, GB/s
17.7
20.6
Write speed, GB/s
12.7
14.7
Memory bandwidth, mbps
21300
25600
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
3075
3393
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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