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SK Hynix HMT125S6TFR8C-G7 2GB
Samsung M471B5273CH0-YK0 4GB

SK Hynix HMT125S6TFR8C-G7 2GB vs Samsung M471B5273CH0-YK0 4GB

Overall score
star star star star star
SK Hynix HMT125S6TFR8C-G7 2GB

SK Hynix HMT125S6TFR8C-G7 2GB

Overall score
star star star star star
Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

Differences Specifications Comments

Differences

SK Hynix HMT125S6TFR8C-G7 2GB Reasons to consider
SK Hynix HMT125S6TFR8C-G7 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 38
    Around 24% lower latency
Samsung M471B5273CH0-YK0 4GB Reasons to consider
Samsung M471B5273CH0-YK0 4GB
Report a bug
  • Faster reading speed, GB/s
    12.6 left arrow 6.9
    Average value in the tests
  • Faster write speed, GB/s
    8.8 left arrow 3.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 8500
    Around 1.51 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HMT125S6TFR8C-G7 2GB
Samsung M471B5273CH0-YK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    29 left arrow 38
  • Read speed, GB/s
    6.9 left arrow 12.6
  • Write speed, GB/s
    3.8 left arrow 8.8
  • Memory bandwidth, mbps
    8500 left arrow 12800
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    865 left arrow 2174

SK Hynix HMT125S6TFR8C-G7 2GB RAM comparisons

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Samsung M471B5273CH0-YK0 4GB RAM comparisons

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