SK Hynix HYMP512U64CP8-S5 1GB
Samsung M378B5173BH0-CK0 4GB

SK Hynix HYMP512U64CP8-S5 1GB vs Samsung M378B5173BH0-CK0 4GB

Overall score
star star star star star
SK Hynix HYMP512U64CP8-S5 1GB

SK Hynix HYMP512U64CP8-S5 1GB

Overall score
star star star star star
Samsung M378B5173BH0-CK0 4GB

Samsung M378B5173BH0-CK0 4GB

Differences

  • Faster reading speed, GB/s
    4 left arrow 13
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    43 left arrow 54
    Around -26% lower latency
  • Faster write speed, GB/s
    7.6 left arrow 2,228.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 6400
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
SK Hynix HYMP512U64CP8-S5 1GB
Samsung M378B5173BH0-CK0 4GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR3
  • Latency in PassMark, ns
    54 left arrow 43
  • Read speed, GB/s
    4,204.8 left arrow 13.0
  • Write speed, GB/s
    2,228.5 left arrow 7.6
  • Memory bandwidth, mbps
    6400 left arrow 12800
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    649 left arrow 1994
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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