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Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Comparez
Kingston SNY1600S11-4G-EDEG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Note globale
Kingston SNY1600S11-4G-EDEG 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Kingston SNY1600S11-4G-EDEG 4GB
Signaler un bogue
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
11.9
9.4
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
7.5
5.1
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
29
29
Vitesse de lecture, GB/s
9.4
11.9
Vitesse d'écriture, GB/s
5.1
7.5
Largeur de bande de la mémoire, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Vitesse d'horloge
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1432
2135
Kingston SNY1600S11-4G-EDEG 4GB Comparaison des RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB Comparaison des RAM
Kingston 9905713-019.A00G 4GB
Samsung M393A2K40BB0-CPB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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Signaler un bogue
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