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Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Kingston SNY1600S11-4G-EDEG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

总分
star star star star star
Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

差异 规格 评论

差异

Kingston SNY1600S11-4G-EDEG 4GB 需要考虑的原因
Kingston SNY1600S11-4G-EDEG 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
报告一个错误
  • 更快的读取速度，GB/s
    11.9 left arrow 9.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.5 left arrow 5.1
    测试中的平均数值

规格

完整的技术规格清单
Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    29 left arrow 29
  • 读取速度，GB/s
    9.4 left arrow 11.9
  • 写入速度，GB/s
    5.1 left arrow 7.5
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1432 left arrow 2135

Kingston SNY1600S11-4G-EDEG 4GB RAM的比较

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB RAM的比较

Kingston 9905599-010.A00G 4GB
Crucial Technology CB8GS2400.C8D 8GB
RAM Latency Calculator
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