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Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Kingston SNY1600S11-4G-EDEG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

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Kingston SNY1600S11-4G-EDEG 4GB

Kingston SNY1600S11-4G-EDEG 4GB

Punteggio complessivo
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB

Differenze Specifiche tecniche Commenti

Differenze

Kingston SNY1600S11-4G-EDEG 4GB Motivi da considerare
Kingston SNY1600S11-4G-EDEG 4GB
Segnala un bug
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11.9 left arrow 9.4
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.5 left arrow 5.1
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    29 left arrow 29
  • Velocità di lettura, GB/s
    9.4 left arrow 11.9
  • Velocità di scrittura, GB/s
    5.1 left arrow 7.5
  • Larghezza di banda della memoria, mbps
    12800 left arrow 12800
Other
  • Descrizione
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Temporizzazioni / Velocità di clock
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Classifica PassMark (più sono, meglio è)
    1432 left arrow 2135

Kingston SNY1600S11-4G-EDEG 4GB Confronto tra le RAM

A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB Confronto tra le RAM

Kingston KHYXPX-HYJ 8GB
G Skill Intl F4-3466C16-8GTZSW 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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