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Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Confronto
Kingston SNY1600S11-4G-EDEG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Punteggio complessivo
Kingston SNY1600S11-4G-EDEG 4GB
Punteggio complessivo
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Differenze
Specifiche tecniche
Commenti
Differenze
Motivi da considerare
Kingston SNY1600S11-4G-EDEG 4GB
Segnala un bug
Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Segnala un bug
Velocità di lettura più elevata, GB/s
11.9
9.4
Valore medio nei test
Velocità di scrittura più elevata, GB/s
7.5
5.1
Valore medio nei test
Specifiche tecniche
Elenco completo delle specifiche tecniche
Kingston SNY1600S11-4G-EDEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB
Caratteristiche principali
Tipo di memoria
DDR3
DDR3
Latenza in PassMark, ns
29
29
Velocità di lettura, GB/s
9.4
11.9
Velocità di scrittura, GB/s
5.1
7.5
Larghezza di banda della memoria, mbps
12800
12800
Other
Descrizione
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Temporizzazioni / Velocità di clock
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)
1432
2135
Kingston SNY1600S11-4G-EDEG 4GB Confronto tra le RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AO1L16BC4R1-BQ7S 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6AFR8C-PB 8GB Confronto tra le RAM
Corsair CMK32GX4M4A2133C15 8GB
Avant Technology W6451U48J7240N6 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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