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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
SK Hynix HMT325U6CFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB vs SK Hynix HMT325U6CFR8C-H9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB

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SK Hynix HMT325U6CFR8C-H9 2GB

SK Hynix HMT325U6CFR8C-H9 2GB

Differenze Specifiche tecniche Commenti

Differenze

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    26 left arrow 39
    Intorno 33% latenza inferiore
SK Hynix HMT325U6CFR8C-H9 2GB Motivi da considerare
SK Hynix HMT325U6CFR8C-H9 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    13.6 left arrow 12.3
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    7.8 left arrow 7.4
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB
SK Hynix HMT325U6CFR8C-H9 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    26 left arrow 39
  • Velocità di lettura, GB/s
    12.3 left arrow 13.6
  • Velocità di scrittura, GB/s
    7.4 left arrow 7.8
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1678 left arrow 1940

Hynix Semiconductor (Hyundai Electronics) HMT325U6BFR8C-H9 2GB Confronto tra le RAM

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

SK Hynix HMT325U6CFR8C-H9 2GB Confronto tra le RAM

Kingston 9965525-155.A00LF 8GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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