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Micron Technology 16JSF51264HZ-1G4D1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

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Micron Technology 16JSF51264HZ-1G4D1 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 16JSF51264HZ-1G4D1 4GB Motivi da considerare
Micron Technology 16JSF51264HZ-1G4D1 4GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    10.5 left arrow 8.8
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    6.8 left arrow 5.6
    Valore medio nei test
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Motivi da considerare
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    30 left arrow 43
    Intorno -43% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche
Micron Technology 16JSF51264HZ-1G4D1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    43 left arrow 30
  • Velocità di lettura, GB/s
    10.5 left arrow 8.8
  • Velocità di scrittura, GB/s
    6.8 left arrow 5.6
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1682 left arrow 1344

Micron Technology 16JSF51264HZ-1G4D1 4GB Confronto tra le RAM

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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Confronto tra le RAM

Samsung M471B5273CH0-CH9 4GB
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RAM Latency Calculator
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