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Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5773DH0-CH9 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M471B5773DH0-CH9 2GB

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Micron Technology 8KTF25664HZ-1G4M1 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

Punteggio complessivo
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Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 8KTF25664HZ-1G4M1 2GB Motivi da considerare
Micron Technology 8KTF25664HZ-1G4M1 2GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    41 left arrow 43
    Intorno 5% latenza inferiore
Samsung M471B5773DH0-CH9 2GB Motivi da considerare
Samsung M471B5773DH0-CH9 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    11 left arrow 10
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Micron Technology 8KTF25664HZ-1G4M1 2GB
Samsung M471B5773DH0-CH9 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR3 left arrow DDR3
  • Latenza in PassMark, ns
    41 left arrow 43
  • Velocità di lettura, GB/s
    10.0 left arrow 11.0
  • Velocità di scrittura, GB/s
    7.2 left arrow 7.2
  • Larghezza di banda della memoria, mbps
    10600 left arrow 10600
Other
  • Descrizione
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Temporizzazioni / Velocità di clock
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Classifica PassMark (più sono, meglio è)
    1210 left arrow 1393

Micron Technology 8KTF25664HZ-1G4M1 2GB Confronto tra le RAM

Samsung M471B5673FH0-CF8 2GB
Corsair CMR64GX4M4C3000C15 16GB

Samsung M471B5773DH0-CH9 2GB Confronto tra le RAM

Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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