Micron Technology 8KTF25664HZ-1G4M1 2GB vs Samsung M471B5773DH0-CH9 2GB

Pontuação geral

Micron Technology 8KTF25664HZ-1G4M1 2GB

Micron Technology 8KTF25664HZ-1G4M1 2GB

Pontuação geral

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Diferenças Especificações Comentários

Diferenças

Micron Technology 8KTF25664HZ-1G4M1 2GB

Razões a considerar
Micron Technology 8KTF25664HZ-1G4M1 2GB

Relatar um erro

Abaixo da latência nos testes do PassMark, ns

41 43

Por volta de 5% menor latência

Samsung M471B5773DH0-CH9 2GB

Razões a considerar
Samsung M471B5773DH0-CH9 2GB

Relatar um erro

Velocidade de leitura mais rápida, GB/s

11 10

Valor médio nos testes

Especificações

Lista completa de especificações técnicas

Micron Technology 8KTF25664HZ-1G4M1 2GB

Samsung M471B5773DH0-CH9 2GB

Características principais

Tipo de memória

DDR3 DDR3
Latência em PassMark, ns

41 43
Velocidade de leitura, GB/s

10.0 11.0
Velocidade de escrita, GB/s

7.2 7.2
Largura de banda de memória, mbps

10600 10600

Other

Descrição

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Tempos / Velocidade do relógio

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (Quanto mais, melhor)

1210 1393

RAM Latency Calculator

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RAM 2

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