SK Hynix HMT325S6EFR8A-PB 2GB vs Samsung M471B5773DH0-CH9 2GB

Punteggio complessivo

SK Hynix HMT325S6EFR8A-PB 2GB

SK Hynix HMT325S6EFR8A-PB 2GB

Punteggio complessivo

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

Differenze Specifiche tecniche Commenti

Differenze

SK Hynix HMT325S6EFR8A-PB 2GB

Motivi da considerare
SK Hynix HMT325S6EFR8A-PB 2GB

Al di sotto della latenza nei test PassMark, ns

29 43

Intorno 33% latenza inferiore
Larghezza di banda di memoria superiore, mbps

12800 10600

Intorno 1.21% larghezza di banda superiore

Samsung M471B5773DH0-CH9 2GB

Motivi da considerare
Samsung M471B5773DH0-CH9 2GB

Velocità di lettura più elevata, GB/s

11 9.6

Valore medio nei test
Velocità di scrittura più elevata, GB/s

7.2 6.7

Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche

SK Hynix HMT325S6EFR8A-PB 2GB

Samsung M471B5773DH0-CH9 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

29 43
Velocità di lettura, GB/s

9.6 11.0
Velocità di scrittura, GB/s

6.7 7.2
Larghezza di banda della memoria, mbps

12800 10600

Other

Descrizione

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
Classifica PassMark (più sono, meglio è)

1204 1393

RAM Latency Calculator

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RAM 2

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