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A-DATA Technology DQKD1A08 1GB
Corsair CMD64GX4M4A2666C15 16GB

A-DATA Technology DQKD1A08 1GB vs Corsair CMD64GX4M4A2666C15 16GB

总分
star star star star star
A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分
star star star star star
Corsair CMD64GX4M4A2666C15 16GB

Corsair CMD64GX4M4A2666C15 16GB

差异 规格 评论

差异

A-DATA Technology DQKD1A08 1GB 需要考虑的原因
A-DATA Technology DQKD1A08 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 14
    测试中的平均数值
Corsair CMD64GX4M4A2666C15 16GB 需要考虑的原因
Corsair CMD64GX4M4A2666C15 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    41 left arrow 52
    左右 -27% 更低的延时
  • 更快的写入速度，GB/s
    13.9 left arrow 1,145.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 4200
    左右 4.05 更高的带宽

规格

完整的技术规格清单
A-DATA Technology DQKD1A08 1GB
Corsair CMD64GX4M4A2666C15 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 41
  • 读取速度，GB/s
    2,614.5 left arrow 14.0
  • 写入速度，GB/s
    1,145.9 left arrow 13.9
  • 内存带宽，mbps
    4200 left arrow 17000
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    409 left arrow 3100

A-DATA Technology DQKD1A08 1GB RAM的比较

SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB

Corsair CMD64GX4M4A2666C15 16GB RAM的比较

Samsung M3 78T3354BZ0-CCC 256MB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9905702-008.A00G 8GB
Kingston 9905702-008.A00G 8GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
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内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
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Essencore Limited IM44GU48N24-FFFHAB 4GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Kingston KMKYF9-MID 8GB
Kingston KMKYF9-MID 8GB
内存RAM
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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Patriot Memory (PDP Systems) 4000 C16 Series 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
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Crucial Technology BL16G32C16U4R.16FE 16GB
内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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Apacer Technology 78.C2GFL.C720B 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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V-Color Technology Inc. TA48G32S816SK 8GB
内存RAM
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Samsung M393A1G40DB1-CRC 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM