Samsung M3 93T5750CZA-CE6 2GB vs Essencore Limited IM44GU48N24-FFFHAB 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.9

测试中的平均数值

Essencore Limited IM44GU48N24-FFFHAB 4GB

需要考虑的原因
Essencore Limited IM44GU48N24-FFFHAB 4GB

报告一个错误

低于PassMark测试中的延时，ns

64 77

左右 -20% 更低的延时
更快的写入速度，GB/s

8.5 2,622.0

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 64
读取速度，GB/s

3,405.2 16.9
写入速度，GB/s

2,622.0 8.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 1845

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP112U64CP8-S6 1GB

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Micron Technology 4ATF51264HZ-2G3E1 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Essencore Limited IM44GU48N24-FFFHAB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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G Skill Intl F4-4000C14-8GTZR 8GB

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AMD R538G1601U2S-UO 8GB

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Crucial Technology BL16G32C16U4R.16FE 16GB

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Kingston 99P5474-014.A00LF 4GB

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Crucial Technology CT4G4SFS8266.C8FE 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

V-Color Technology Inc. TA48G32S816SK 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Samsung M393A1G40DB1-CRC 8GB

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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Smart Modular SH564128FH8NZQNSCG 4GB

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G Skill Intl F4-3466C16-8GTZSW 8GB

G Skill Intl F4-3466C16-8GTZSW 8GB