Corsair CMD8GX3M2A2933C12 4GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

总分

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

Corsair CMD8GX3M2A2933C12 4GB

需要考虑的原因
Corsair CMD8GX3M2A2933C12 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 37

左右 24% 更低的延时

Micron Technology 16ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB

报告一个错误

更快的读取速度，GB/s

14.7 13.5

测试中的平均数值
更快的写入速度，GB/s

10.6 9.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 37
读取速度，GB/s

13.5 14.7
写入速度，GB/s

9.3 10.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2278 2592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD8GX3M2A2933C12 4GB

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Samsung 1600 CL10 Series 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BL16G30C15U4W.M16FE1 16GB

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Samsung M378A1K43CB2-CRC 8GB

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Samsung M378A1K43BB2-CTD 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB