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Crucial Technology CT25664BA160B.C16F 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
比较
Crucial Technology CT25664BA160B.C16F 2GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
总分
Crucial Technology CT25664BA160B.C16F 2GB
总分
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT25664BA160B.C16F 2GB
报告一个错误
低于PassMark测试中的延时,ns
29
37
左右 22% 更低的延时
需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
报告一个错误
更快的读取速度,GB/s
16
14.3
测试中的平均数值
更快的写入速度,GB/s
12.6
10.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT25664BA160B.C16F 2GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
37
读取速度,GB/s
14.3
16.0
写入速度,GB/s
10.1
12.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2227
2808
Crucial Technology CT25664BA160B.C16F 2GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT25664BA160B.C16F 2GB
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Corsair CMK64GX4M2D3600C18 32GB
报告一个错误
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Bug description
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