RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
比较
Crucial Technology CT51264BA1339.D16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
总分
Crucial Technology CT51264BA1339.D16F 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
差异
规格
评论
差异
需要考虑的原因
Crucial Technology CT51264BA1339.D16F 4GB
报告一个错误
更快的读取速度,GB/s
13.2
9.5
测试中的平均数值
更快的写入速度,GB/s
8.2
7.7
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
报告一个错误
低于PassMark测试中的延时,ns
37
39
左右 -5% 更低的延时
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Crucial Technology CT51264BA1339.D16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
39
37
读取速度,GB/s
13.2
9.5
写入速度,GB/s
8.2
7.7
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2165
1949
Crucial Technology CT51264BA1339.D16F 4GB RAM的比较
Samsung M378B5773DH0-CH9 2GB
Crucial Technology CT25664BA160B.C8FE 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM的比较
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BLS16G4S240FSD.16FAD 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Samsung M3 91T2953GZ3-CF7 1GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.C16FP 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Kingston 9905630-066.A00G 16GB
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Samsung M393B1G70BH0-YK0 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
报告一个错误
×
Bug description
Source link