Crucial Technology CT51264BF160B.M16F 4GB vs Micron Technology 16ATF2G64AZ-2G3B1 16GB

总分

Crucial Technology CT51264BF160B.M16F 4GB

Crucial Technology CT51264BF160B.M16F 4GB

总分

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

差异规格评论

差异

Crucial Technology CT51264BF160B.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BF160B.M16F 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 35

左右 20% 更低的延时

Micron Technology 16ATF2G64AZ-2G3B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G3B1 16GB

报告一个错误

更快的读取速度，GB/s

15 11.8

测试中的平均数值
更快的写入速度，GB/s

10.4 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BF160B.M16F 4GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 35
读取速度，GB/s

11.8 15.0
写入速度，GB/s

8.2 10.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1854 2672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMAA2GS6CJR8N-XN 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C16-8GTZKY 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology BLS4G4D240FSC.M8FADG 4GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB