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Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Neo Forza GKE160SO204808-3200 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB vs Neo Forza GKE160SO204808-3200 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
总分
Neo Forza GKE160SO204808-3200 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
63
左右 46% 更低的延时
需要考虑的原因
Neo Forza GKE160SO204808-3200 16GB
报告一个错误
更快的读取速度,GB/s
14.7
8.6
测试中的平均数值
更快的写入速度,GB/s
12.7
5.8
测试中的平均数值
更高的内存带宽,mbps
25600
10600
左右 2.42 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Neo Forza GKE160SO204808-3200 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
34
63
读取速度,GB/s
8.6
14.7
写入速度,GB/s
5.8
12.7
内存带宽,mbps
10600
25600
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
1682
2543
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT31GR7BFR4A-H9 8GB
Kingston 99P5723-006.A00G 8GB
Neo Forza GKE160SO204808-3200 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5584-007.A00LF 4GB
Corsair CMD64GX4M4B3466C16 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMSX16GX4M1A2666C18 16GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Neo Forza GKE160SO204808-3200 16GB
Kingston 9905458-017.A01LF 4GB
Asgard VMA41UG-MEC1U2AW1 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2800C16-8GRK 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905678-138.A00G 8GB
Corsair CM2X1024-6400C4 1GB
Kingston ACR26D4S9S8HJ-8 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology BL8G32C16S4B.M8FE 8GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK16GX4M2C3000C16 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Kingston 99U5474-028.A00LF 4GB
Kingston 9905668-002.A00G 8GB
Corsair CMZ16GX3M2A2400C10 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
Kingston KHX3000C15/16GX 16GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
报告一个错误
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