RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Kingston HP26D4U6D8ME-16X 16GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Kingston HP26D4U6D8ME-16X 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Kingston HP26D4U6D8ME-16X 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
Kingston HP26D4U6D8ME-16X 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
62
左右 -121% 更低的延时
更快的读取速度,GB/s
14.8
7.4
测试中的平均数值
更快的写入速度,GB/s
8.5
5.9
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Kingston HP26D4U6D8ME-16X 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
28
读取速度,GB/s
7.4
14.8
写入速度,GB/s
5.9
8.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1612
2665
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Kingston HP26D4U6D8ME-16X 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Kingston HP26D4U6D8ME-16X 16GB
PNY Electronics PNY 2GB
Corsair CMWX16GC3200C16W4 16GB
Nanya Technology M2F2G64CB88B7N-CG 2GB
Corsair CMH32GX4M2Z3600C18 16GB
Team Group Inc. UD5-6400 16GB
Transcend Information TS512MLH64V4H 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingmax Semiconductor GLLH22F-18KII5------ 16GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BLS8G4D240FSB.M16FBD 8GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Kingston 99U5584-004.A00LF 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2400C17-8GNT 8GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMK64GX4M4B3466C16 16GB
Kingston K1N7HK-ELC 2GB
Micron Technology 18ASF1G72PZ-2G3B1 8GB
Crucial Technology CT51264BD160B.C16F 4GB
SK Hynix V-GeN D4H4GL26A8TL5 4GB
TwinMOS 8DPT5MK8-TATP 2GB
A-DATA Technology DDR4 3300 2OZ 4GB
Kingston 99U5584-001.A00LF 4GB
Kingston 9905678-156.A00G 8GB
报告一个错误
×
Bug description
Source link