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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M471A1A43CB1-CRC 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Samsung M471A1A43CB1-CRC 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Samsung M471A1A43CB1-CRC 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
更快的写入速度,GB/s
5.9
5.4
测试中的平均数值
需要考虑的原因
Samsung M471A1A43CB1-CRC 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
62
左右 -130% 更低的延时
更快的读取速度,GB/s
11.2
7.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Samsung M471A1A43CB1-CRC 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
27
读取速度,GB/s
7.4
11.2
写入速度,GB/s
5.9
5.4
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1612
1774
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Samsung M471A1A43CB1-CRC 8GB RAM的比较
Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kreton Corporation 51624xxxx68x35xxxx 2GB
Essencore Limited IM44GU48N24-FFFHA0 4GB
Crucial Technology CT32G48C40U5.M16A1 32GB
Corsair CMK256GX4M8A2400C16 32GB
Samsung M393B5270CH0-CH9 4GB
Gloway International Co. Ltd. WAR4U2666D19081C 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
Samsung M3 78T2953EZ3-CF7 1GB
Good Wealth Technology Ltd. KETECH 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-4000C19-16GTRS 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung M378A1G43EB1-CPB 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Team Group Inc. DDR4 3600 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Jinyu CL16-16-16 D4-2400 8GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMK64GX4M4A2666C16 16GB
Protocol Engines Kingrock 800 2GB 2GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Kllisre M471A1K43CB1-CTD 8GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMK16GX4M2B3733C17 8GB
报告一个错误
×
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