Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 -27% 更低的延时
更快的读取速度，GB/s

17.7 10.9

测试中的平均数值
更快的写入速度，GB/s

12.7 7.1

测试中的平均数值
更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 22
读取速度，GB/s

10.9 17.7
写入速度，GB/s

7.1 12.7
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1668 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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