Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
AMD R334G1339U2S 4GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB vs AMD R334G1339U2S 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

总分
star star star star star
AMD R334G1339U2S 4GB

AMD R334G1339U2S 4GB

差异

  • 低于PassMark测试中的延时,ns
    28 left arrow 29
    左右 3% 更低的延时
  • 更快的读取速度,GB/s
    10.5 left arrow 9
    测试中的平均数值
  • 更快的写入速度,GB/s
    8.4 left arrow 4.8
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
AMD R334G1339U2S 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    28 left arrow 29
  • 读取速度,GB/s
    10.5 left arrow 9.0
  • 写入速度,GB/s
    8.4 left arrow 4.8
  • 内存带宽,mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1570 left arrow 1726
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较