Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Ramos Technology RMB4GB584CA3-13HC 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB vs Ramos Technology RMB4GB584CA3-13HC 4GB

总分

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

总分

Ramos Technology RMB4GB584CA3-13HC 4GB

Ramos Technology RMB4GB584CA3-13HC 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 66

左右 64% 更低的延时
更快的读取速度，GB/s

15.5 6.6

测试中的平均数值
更快的写入速度，GB/s

8.8 3.8

测试中的平均数值

Ramos Technology RMB4GB584CA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB584CA3-13HC 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) MPPU4GB13338Chips 4GB

Ramos Technology RMB4GB584CA3-13HC 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

24 66
读取速度，GB/s

15.5 6.6
写入速度，GB/s

8.8 3.8
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2444 1055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3200C18-16GRS 16GB

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Crucial Technology CT8G4SFD8213.C16FBD2 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Apacer Technology 78.CAGP7.AFW0C 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2800C15-16GVR 16GB

G Skill Intl F4-2800C15-16GVR 16GB

Samsung M3 78T5663RZ3-CE6 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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