Kingston KVR800D2N6/2G 2GB vs Kingston 9965669-019.A00G 16GB

总分

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分

Kingston 9965669-019.A00G 16GB

Kingston 9965669-019.A00G 16GB

差异规格评论

差异

Kingston KVR800D2N6/2G 2GB

需要考虑的原因
Kingston KVR800D2N6/2G 2GB

报告一个错误

更快的读取速度，GB/s

5 11.6

测试中的平均数值

Kingston 9965669-019.A00G 16GB

需要考虑的原因
Kingston 9965669-019.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 50

左右 -67% 更低的延时
更快的写入速度，GB/s

8.5 1,905.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston KVR800D2N6/2G 2GB

Kingston 9965669-019.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

50 30
读取速度，GB/s

5,143.3 11.6
写入速度，GB/s

1,905.1 8.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

855 2517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 4ATF51264AZ-2G6E1 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BLM16G44C19U4B.M8FB1 16GB

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G Skill Intl F4-3800C14-8GTZN 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMY8GX3M2A2666C10 4GB

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Kingston KVR16N11/8-SP 8GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMW64GX4M4C3466C16 16GB

Corsair CMW64GX4M4C3466C16 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Micron Technology 36ASF2G72LZ-2G1A1 16GB

Mushkin 991586 2GB

Mushkin 991586 2GB

Transcend Information TS512MLH64V4H 4GB

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