Micron Technology 18HTF12872AY-800F1 1GB vs Samsung M471A4G43BB1-CWE 32GB

总分

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

总分

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

差异规格评论

差异

Micron Technology 18HTF12872AY-800F1 1GB

需要考虑的原因
Micron Technology 18HTF12872AY-800F1 1GB

报告一个错误

低于PassMark测试中的延时，ns

58 70

左右 17% 更低的延时
更快的读取速度，GB/s

4 15

测试中的平均数值
更快的写入速度，GB/s

2,107.0 14.3

测试中的平均数值

Samsung M471A4G43BB1-CWE 32GB

需要考虑的原因
Samsung M471A4G43BB1-CWE 32GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Micron Technology 18HTF12872AY-800F1 1GB

Samsung M471A4G43BB1-CWE 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 70
读取速度，GB/s

4,025.3 15.0
写入速度，GB/s

2,107.0 14.3
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

670 2519

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Kingston 9905471-076.A00LF 8GB

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Samsung M471B5773DH0-CH9 2GB

Elpida EBJ21UE8BDS0-DJ-F 2GB

Elpida EBJ21UE8BDS0-DJ-F 2GB

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Kingston KVR533D2N4 512MB

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Kingston XRMWRN-HYA 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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EXCELERAM EKBLACK4163016AD 8GB

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Corsair CM4X8GD3200C16K2E 8GB