Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung M393A2G40EB2-CTD 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Samsung M393A2G40EB2-CTD 16GB

Samsung M393A2G40EB2-CTD 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

Samsung M393A2G40EB2-CTD 16GB

需要考虑的原因
Samsung M393A2G40EB2-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

44 54

左右 -23% 更低的延时
更快的读取速度，GB/s

8.5 3

测试中的平均数值
更快的写入速度，GB/s

5.6 1,308.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung M393A2G40EB2-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 44
读取速度，GB/s

3,573.5 8.5
写入速度，GB/s

1,308.1 5.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

371 1660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT51264BA1339.D16F 4GB

Crucial Technology CT51264BA1339.D16F 4GB

SK Hynix HMA41GR7MFR4N-TF 8GB

SK Hynix HMA41GR7MFR4N-TF 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

Kingston ACR16D3LS1NGG/2G 2GB

Kingston ACR16D3LS1NGG/2G 2GB

G Skill Intl F4-3200C15-8GVK 8GB

G Skill Intl F4-3200C15-8GVK 8GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA81GS6AFR8N-VK 8GB

SK Hynix HMA81GS6AFR8N-VK 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

HT Micron HTH5AN8G8NCJR-VKD 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

ATP Electronics Inc. A4G08QA8BNPBSE 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Gloway International (HK) STK4U2400D15082C 8GB

Gloway International (HK) STK4U2400D15082C 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMK16GX4M1Z3600C18 16GB

Corsair CMK16GX4M1Z3600C18 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Corsair CMK32GX4M4B3200C14 8GB

Corsair CMK32GX4M4B3200C14 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Samsung SF4641G8CKHI6DFSDS 8GB

Samsung SF4641G8CKHI6DFSDS 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB