Nanya Technology NT4GC72C4PG0NK-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4A-PB 8GB

Nanya Technology NT4GC72C4PG0NK-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4A-PB 8GB

总分
star star star star star
Nanya Technology NT4GC72C4PG0NK-CG 4GB

Nanya Technology NT4GC72C4PG0NK-CG 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4A-PB 8GB

差异

  • 低于PassMark测试中的延时,ns
    34 left arrow 48
    左右 -41% 更低的延时
  • 更快的读取速度,GB/s
    10.1 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度,GB/s
    9.3 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽,mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72C4PG0NK-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4A-PB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    48 left arrow 34
  • 读取速度,GB/s
    8.9 left arrow 10.1
  • 写入速度,GB/s
    8.4 left arrow 9.3
  • 内存带宽,mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1804 left arrow 2282
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较