Neo Forza NMUD416E82-3600 16GB vs Crucial Technology CT16G4SFRA32A.C8FB 16GB

总分

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

总分

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

差异规格评论

差异

Neo Forza NMUD416E82-3600 16GB

需要考虑的原因
Neo Forza NMUD416E82-3600 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时
更快的读取速度，GB/s

19.6 15.1

测试中的平均数值
更快的写入速度，GB/s

16.0 12.3

测试中的平均数值

Crucial Technology CT16G4SFRA32A.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA32A.C8FB 16GB

报告一个错误

更高的内存带宽，mbps

25600 19200

左右 1.33 更高的带宽

规格

完整的技术规格清单

Neo Forza NMUD416E82-3600 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

19.6 15.1
写入速度，GB/s

16.0 12.3
内存带宽，mbps

19200 25600

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3909 2939

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Neo Forza NMUD416E82-3600 16GB

Neo Forza NMUD416E82-3600 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Crucial Technology CT16G4SFRA32A.C8FB 16GB

Kingston ACR16D3LU1KNG/4G 4GB

Kingston ACR16D3LU1KNG/4G 4GB

G Skill Intl F3-1600C7-8GTX 8GB

G Skill Intl F3-1600C7-8GTX 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C16-16GTZKY 16GB

G Skill Intl F4-3200C16-16GTZKY 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Micron Technology 8ATF51264AZ-2G1B1 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-3333C16-4GRKD 4GB

G Skill Intl F4-3333C16-4GRKD 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

Micron Technology 8ATF1G64AZ-2G6J1 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Corsair CMK8GX4M1Z3600C18 8GB

Corsair CMK8GX4M1Z3600C18 8GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Essencore Limited KD48GU880-34A170X 8GB

Essencore Limited KD48GU880-34A170X 8GB

Crucial Technology RM51264BA1339.16FR 4GB

Crucial Technology RM51264BA1339.16FR 4GB

Kingston KV0M5R-MIE 8GB

Kingston KV0M5R-MIE 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB