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PNY Electronics PNY 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB

PNY Electronics PNY 2GB vs G Skill Intl F4-3600C17-16GTZSW 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
G Skill Intl F4-3600C17-16GTZSW 16GB

G Skill Intl F4-3600C17-16GTZSW 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
G Skill Intl F4-3600C17-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3600C17-16GTZSW 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.3 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 27
  • 读取速度，GB/s
    13.8 left arrow 18.3
  • 写入速度，GB/s
    8.4 left arrow 17.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3956

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-3600C17-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
G Skill Intl F4-3200C16-8GSXWB 8GB
G Skill Intl F4-3200C16-8GSXWB 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C17-16GTZSW 16GB
G Skill Intl F4-3600C17-16GTZSW 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Kingston 9905711-038.A00G 8GB
Kingston 9905711-038.A00G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
V-Color Technology Inc. TA48G36S818BN 8GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Golden Empire CL14-14-14 D4-2400 16GB
Golden Empire CL14-14-14 D4-2400 16GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
InnoDisk Corporation M4S0-8GSSOCRG 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston KHX3333C16D4/16GX 16GB
Kingston KHX3333C16D4/16GX 16GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM