RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

PNY Electronics PNY 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    13.8 left arrow 9.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.6
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 37
  • 读取速度，GB/s
    13.8 left arrow 9.1
  • 写入速度，GB/s
    8.4 left arrow 7.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2046

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Kingston 9965669-008.A03G 16GB
Kingston 9965669-008.A03G 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingston 9905701-132.A00G 16GB
Kingston 9905701-132.A00G 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Kingston 99U5700-010.A00G 8GB
Kingston 99U5700-010.A00G 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KHX2666C16D4/4G 4GB
Kingston KHX2666C16D4/4G 4GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
SK Hynix HMA851U6JJR6N-VK 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMK32GX4M2B3466C16 16GB
Corsair CMK32GX4M2B3466C16 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-4266C19-32GTZR 32GB
G Skill Intl F4-4266C19-32GTZR 32GB
内存RAM