Samsung M3 78T2863EHS-CF7 1GB vs Micron Technology 8ATF1G64AZ-3G2R1 8GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.9

测试中的平均数值
更快的写入速度，GB/s

2,123.3 12.4

测试中的平均数值

Micron Technology 8ATF1G64AZ-3G2R1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-3G2R1 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 59

左右 -90% 更低的延时

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 31
读取速度，GB/s

4,833.8 16.9
写入速度，GB/s

2,123.3 12.4
内存带宽，mbps

6400 no data

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 , 1.20000005, CAS Supported:
时序/时钟速度

5-5-5-15 / 800 MHz no data
排名PassMark (越多越好)

731 3043

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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