Samsung M3 78T2863EHS-CF7 1GB vs Samsung M3 93T2950BZ3-CCC 1GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Samsung M3 93T2950BZ3-CCC 1GB

Samsung M3 93T2950BZ3-CCC 1GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 3

测试中的平均数值
更快的写入速度，GB/s

2,123.3 1,470.4

测试中的平均数值
更高的内存带宽，mbps

6400 3200

左右 2% 更高的带宽

Samsung M3 93T2950BZ3-CCC 1GB

需要考虑的原因
Samsung M3 93T2950BZ3-CCC 1GB

报告一个错误

低于PassMark测试中的延时，ns

53 59

左右 -11% 更低的延时

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 93T2950BZ3-CCC 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

59 53
读取速度，GB/s

4,833.8 3,631.8
写入速度，GB/s

2,123.3 1,470.4
内存带宽，mbps

6400 3200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 3-3-3-12 / 400 MHz
排名PassMark (越多越好)

731 583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G36C16U4RL.M16FE 16GB

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Samsung M3 78T2863EHS-CF7 1GB

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A-DATA Technology ADOVE1A0834E 1GB

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Kingston 99U5474-013.A00LF 2GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB