Samsung M3 78T2953EZ3-CF7 1GB vs Gloway International Co. Ltd. TYA4U2666D19161C 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 12.5

测试中的平均数值

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

需要考虑的原因
Gloway International Co. Ltd. TYA4U2666D19161C 16GB

报告一个错误

低于PassMark测试中的延时，ns

50 58

左右 -16% 更低的延时
更快的写入速度，GB/s

7.3 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 50
读取速度，GB/s

4,241.0 12.5
写入速度，GB/s

1,950.7 7.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 2326

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Essencore Limited KD4AGU88C-26N190A 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Gloway International Co. Ltd. TYA4U2666D19161C 16GB

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Kingston 9905403-444.A00LF 4GB

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Mushkin 991988 (996988) 4GB

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Asgard VMA45UH-MEC1U2AW2 16GB

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SpecTek Incorporated ?????????????????? 2GB

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Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

Corsair CMZ16GX3M2A2400C10 8GB

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Patriot Memory (PDP Systems) 3600 C17 Series 4GB

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Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

G Skill Intl F4-2400C15Z8GNT 8GB

G Skill Intl F4-2400C15Z8GNT 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB