Samsung M3 78T2953EZ3-CF7 1GB vs Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 21

测试中的平均数值

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 58

左右 -164% 更低的延时
更快的写入速度，GB/s

19.6 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 22
读取速度，GB/s

4,241.0 21.0
写入速度，GB/s

1,950.7 19.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 4240

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T2953EZ3-CF7 1GB

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Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

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Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Corsair CM4X16GE2400C16S4 16GB

Corsair CM4X16GE2400C16S4 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

Peak Electronics 256X64M-67E 2GB

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Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB

Crucial Technology BLS16G4D240FSB.16FBR 16GB