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Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Samsung M3 78T3354BZ0-CCC 256MB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

总分
star star star star star
Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分
star star star star star
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

差异 规格 评论

差异

Samsung M3 78T3354BZ0-CCC 256MB 需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB 需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 46
    左右 -156% 更低的延时
  • 更快的读取速度，GB/s
    20.4 left arrow 2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.2 left arrow 1,519.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 3200
    左右 6 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    46 left arrow 18
  • 读取速度，GB/s
    2,909.8 left arrow 20.4
  • 写入速度，GB/s
    1,519.2 left arrow 17.2
  • 内存带宽，mbps
    3200 left arrow 19200
Other
  • 描述
    PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    3-3-3-12 / 400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    241 left arrow 3814

Samsung M3 78T3354BZ0-CCC 256MB RAM的比较

Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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