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Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
比较
Samsung M3 78T3354BZ0-CCC 256MB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
总分
Samsung M3 78T3354BZ0-CCC 256MB
总分
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB
报告一个错误
需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
报告一个错误
低于PassMark测试中的延时,ns
18
46
左右 -156% 更低的延时
更快的读取速度,GB/s
20.4
2
测试中的平均数值
更快的写入速度,GB/s
17.2
1,519.2
测试中的平均数值
更高的内存带宽,mbps
19200
3200
左右 6 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
46
18
读取速度,GB/s
2,909.8
20.4
写入速度,GB/s
1,519.2
17.2
内存带宽,mbps
3200
19200
Other
描述
PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
3-3-3-12 / 400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
241
3814
Samsung M3 78T3354BZ0-CCC 256MB RAM的比较
Samsung M4 70T3354BZ0-CCC 256MB
Kreton Corporation 51621xxxx68x35xxxx 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-018.A00LF 4GB
Ramaxel Technology RMSA3320KE78HAF-3200 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Crucial Technology CT51264BD1339.M16F 4GB
Apacer Technology 78.CAGNK.4040B 8GB
Kingston 9905403-090.A01LF 4GB
Corsair CMW16GX4M2Z4600C18 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3333C16-16GTZSW 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston KHX3200C16D4/32GX 32GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9965596-035.B00G 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
PNY Electronics PNY 2GB
Kingston KHX2400C12D4/16GX 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Mushkin 99[2/7/4]204F 4GB
报告一个错误
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Bug description
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