Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT16G4SFD8213.C16FBD 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Crucial Technology CT16G4SFD8213.C16FBD 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.6

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FBD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FBD 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 77

左右 -120% 更低的延时
更快的写入速度，GB/s

9.6 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 35
读取速度，GB/s

3,405.2 13.6
写入速度，GB/s

2,622.0 9.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2468

RAM Latency Calculator

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RAM 2

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最新比较

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Micron Technology 18ASF1G72AZ-2G1B1 8GB

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Kingston 99U5584-004.A00LF 4GB

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A-DATA Technology DDR4 4133 2OZ 8GB

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A-DATA Technology DDR3 1866 2OZ 4GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Kingston 9905678-156.A00G 8GB

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Kingston 9905403-500.A01LF 8GB

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Kingston KVR16N11/8-SP 8GB

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Team Group Inc. TEAMGROUP-lnd-2133 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

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Crucial Technology BLS4G4D240FSC.8FBR2 4GB

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Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-3600C18-32GVK 32GB

G Skill Intl F4-3600C18-32GVK 32GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

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G Skill Intl F4-3600C17-8GTZ 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMW32GX4M4Z4000C18 8GB

Corsair CMW32GX4M4Z4000C18 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB