Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3733C17-8GTZA 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.2

测试中的平均数值
更快的写入速度，GB/s

2,622.0 15.5

测试中的平均数值

G Skill Intl F4-3733C17-8GTZA 8GB

需要考虑的原因
G Skill Intl F4-3733C17-8GTZA 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3733C17-8GTZA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

3,405.2 20.2
写入速度，GB/s

2,622.0 15.5
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3744

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology CB8GS2400.C8JT 8GB

Crucial Technology CB8GS2400.C8JT 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Avant Technology W6451U67J7240NB 4GB

Avant Technology W6451U67J7240NB 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston ACR24D4S7D8MB-16 16GB

Kingston ACR24D4S7D8MB-16 16GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Ramaxel Technology RMSA3260NA78HAF-2666 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

G Skill Intl F4-4266C19-8GTRS 8GB

Samsung M393B5170EH1-CH9 4GB

Samsung M393B5170EH1-CH9 4GB

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston 9905702-136.A00G 8GB

Kingston 9905702-136.A00G 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Crucial Technology CT16G4SFD8213.M16FA 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingston HP26D4S9S8MD-8 8GB

Kingston HP26D4S9S8MD-8 8GB