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Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
38
77
左右 -103% 更低的延时
更快的读取速度,GB/s
9.4
3
测试中的平均数值
更快的写入速度,GB/s
8.3
2,622.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
38
读取速度,GB/s
3,405.2
9.4
写入速度,GB/s
2,622.0
8.3
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
763
2110
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F3-2133C9-4GAB 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
Kingston 9905403-156.A00LF 2GB
Samsung M393A2G40DB1-CRC 16GB
AMD AE34G1601U1 4GB
Kingston MSI24D4S7D8MH-16 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
SK Hynix HMA82GU6DJR8N-VK 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M393A2K40BB2-CTD 16GB
Kingston 9905471-071.A00LF 8GB
Heoriady M471A1K43CB1-CTD 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMK16GX4M2E4000C19 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9905668-001.A00G 8GB
A-DATA Technology DDR3 1333G 2GB
Micron Technology 4ATF51264HZ-2G6E3 4GB
Samsung M378A1G43DB0-CPB 8GB
Kingston KH2400C15D4/8 8GB
Samsung M378B5673EH1-CF8 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2400C17-4GNT 4GB
Samsung M393B2G70BH0-CK0 16GB
Smart Modular SF464128CK8I6GKSEG 4GB
报告一个错误
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Bug description
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