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Samsung M3 93T5750CZA-CE6 2GB
Micron Technology AFLD44EK2P 4GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology AFLD44EK2P 4GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Micron Technology AFLD44EK2P 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
15.3
测试中的平均数值
需要考虑的原因
Micron Technology AFLD44EK2P 4GB
报告一个错误
低于PassMark测试中的延时,ns
71
77
左右 -8% 更低的延时
更快的写入速度,GB/s
6.8
2,622.0
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology AFLD44EK2P 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
71
读取速度,GB/s
3,405.2
15.3
写入速度,GB/s
2,622.0
6.8
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
1767
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Micron Technology AFLD44EK2P 4GB RAM的比较
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMR16GX4M2A2666C16 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Samsung M378A1K43BB2-CTD 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMT64GX4M4K3600C16 16GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMWX8GF2933Z19W8 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3333C16-16GTZR 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3200C22-32GRS 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6CJR8N-VK 16GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Avant Technology W641GU42J5213NC 8GB
报告一个错误
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Bug description
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